The EL817 series contains a infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package.
Specifications:
- Input Type : DC
- Maximum Collector Emitter Voltage : 35 V
- Maximum Collector Emitter Saturation Voltage : 0.2 V
- Isolation Voltage : 5000 Vrms
- Current Transfer Ratio : 200 % to 400 %
- Maximum Forward Diode Voltage : 1.4 V
- Maximum Input Diode Current : 60 mA
- Maximum Collector Current : 50 mA
- Maximum Power Dissipation : 200 mW
- Maximum Operating Temperature : + 110 C
- Minimum Operating Temperature : - 55 C
- Package / Case : DIP-4
- Forward Current : 20 mA
- Maximum Fall Time : 18 us
- Maximum Reverse Diode Voltage : 6 V
- Maximum Rise Time : 18 us
- Number of Channels per Chip : 1 Channel
- Output Device : NPN Phototransistor
Optocoupler - EL817
- Product Code:SP-Optocoupler-EL817
- Reward Points:1
- Availability:In Stock
-
रo 6.00
- Price in reward points:6
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Tags: Optocoupler, Photocoupler, EL817