• 85V—265V wide range AC power input.
• 65KHz Oscillation Frequency.
• Double chip design with Bipolar Junction Transistor (BJT) to save cost.
• Large scale MOS digital circuit design with E pole BJT driving, so that to enhance its High Voltage
•  

Resistance capability.

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• Self-power supply design, no need for additional IC to supply the electricity.
• Internal integrated constant high voltage current driving circuit, no need for additional resistance.
• Over current, Over loading, Over temperature, Over voltage, Output short circuit and photo-coupler
•  

Failure Protection.

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• Internal Ramp Compensation circuit to keep the stability of the circuit in low voltage and high power
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condition.

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• Internal PMW oscillation circuit with Frequency jittering control to keep EMC characteristics.
• Internal Frequency Conversion. Frequency-down in low load condition, comply with the Europe Standard
• (stand power<0.3W), also reduce the output voltage ripple.
• Ramp current drive circuit included to reduce IC power loss and raise circuit efficiency.
• 4KV Anti-Static ESD test. 

Useful Link

http://grupoautcomp.com.br/wp-content/uploads/2016/11/Specification-IC-DK112.pdf